Search results for "Saturation current"
showing 5 items of 5 documents
Organic Heterojunction Devices Based on Phthalocyanines: A New Approach to Gas Chemosensing.
2020
Organic heterostructures have emerged as highly promising transducers to realize high performance gas sensors. The key reason for such a huge interest in these devices is the associated organic heterojunction effect in which opposite free charges are accumulated at the interface making it highly conducting, which can be exploited in producing highly sensitive and faster response kinetics gas sensors. Metal phthalocyanines (MPc) have been extensively studied to fabricate organic heterostructures because of the large possibilities of structural engineering which are correlated with their bulk thin film properties. Accordingly, in this review, we have performed a comprehensive literature surve…
Modeling and Characterization of SiPM Parameters at Temperatures between 95 K and 300 K
2017
The modeling and characterization of silicon photomultipliers (SiPMs) in a wide temperature range from 95 K to 300 K is presented. The devices under study had the distinctive feature of forward-biased p-n junctions situated under each pixel as active quenching resistors making them particularly appropriate to be operated at cryogenic temperatures. The voltage drop across the diode in a forward direction was measured for a series of injected currents in this temperature range. It was observed that the characteristics of different SiPM types influence the temperature dependence of the reverse saturation current. The devices were further characterized by low-level light-pulse measurements. The…
Series resistance determination and further characterization of c-Si PV modules
2012
Abstract This paper presents a new algorithm for determination of the series resistance of crystalline-Si PV modules from individual illuminated I–V curves. The ideality factor and the reverse saturation current are then extracted in the classic way. The approach is applied to in-situ measured data from modules based on two types of mc-Si feedstock. The results indicate that the method yields physically meaningful parameters. An improved definition of local ideality factor is suggested, resulting in m-V plots unaffected by the series resistance. In addition, m-I plots are introduced for the first time. The novel differential techniques reveal an unexpected rise of the ideality factor at ope…
Extracting parameters from semi-log plots of polycrystalline silicon PV modules outdoor I–V data: Double-exponential model revisited
2010
This paper presents a method for extracting physically meaningful parameters from measured I–V curves of PV modules. The 7-parameter double-exponential model is applied in the modeling. The method is based on linear fitting of semi-logarithmic plots. The paper demonstrates a new technique to estimate the series resistance of a module with high accuracy from such plots. As a result, also the reverse saturation current and the quality factor of the diffusion diode can be determined. The method is applied to outdoor I–V data from a test station with three similar, but not identical, polycrystalline-Si modules. The values of the series resistances found with this method deviate somewhat from th…
Non-Linear Inductors Characterization in Real Operating Conditions for Power Density Optimization in SMPS
2021
The exploitation of power inductors outside their linear region in switching converters can be achieved by raising the current until a decreasing of the inductance can be noticed. It allows using a smaller magnetic core increasing the power density of the converter. On the other hand, a detailed description of the magnetization curve including the temperature is required. Since this information is often not included in the inductor’s datasheets, this paper shows how to identify the behavior of an inductor when it is operated up to saturation and its temperature rises. In order to characterize the inductor in real operating conditions, a dedicated measurement rig has been developed. It consi…